Tag: SiC

ROHM’s High 8V Gate Withstand Voltage Marking Technology Breakthrough for 150V GaN HEMT

Solving the gate breakdown voltage problem of GaN devices contributes to lower power consumption and greater miniaturization of power supplies for base stations and...

‘Your Innovations Powered by ROHM’: CES Videos Demo Leadership in SiC, PMICs and Laser...

Consumer Electronics Show 2021 – A Digital Experience: January 11-14, 2021   Santa Clara, CA and Kyoto, Japan (GLOBE NEWSWIRE) -- ROHM Semiconductor will participate in the all-digital...

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